Surface roughness of thin film atomistic nanometer-size clusters

Authors

DOI:

https://doi.org/10.26089/NumMet.v17r442

Keywords:

surface roughness, molecular dynamics, thin films, silicon dioxide structure

Abstract

An algorithm of surface roughness calculation for the thin film atomistic clusters obtained in numerical experiments is proposed. The algorithm is applied to silicon dioxide films. The thickness of deposited films is up to 70 nm. The deposition process simulation is performed using the classical molecular dynamics method with the DESIL force field developed earlier specially for high-energy deposition simulation. The dependence of surface roughness on the algorithm parameters, the temperature of the substrate, and the energy of deposited silicon atoms is studied.

Author Biographies

F.V. Grigoriev

V.B. Sulimov

A.V. Tikhonravov

References

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    doi 10.1063/1.2130521

Published

29-10-2016

How to Cite

Григорьев Ф., Сулимов В., Тихонравов А. Surface Roughness of Thin Film Atomistic Nanometer-Size Clusters // Numerical Methods and Programming (Vychislitel’nye Metody i Programmirovanie). 2016. 17. 455-459. doi 10.26089/NumMet.v17r442

Issue

Section

Section 1. Numerical methods and applications

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